Solid-state imaging device and method of manufacturing the same, and imaging apparatus

ABSTRACT

A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.

CROSS REFERENCE TO RELATED APPLICATIONS

This is a Continuation Application of U.S. patent application Ser. No.14/278,548, filed May 15, 2014, which is a Continuation Application ofU.S. patent application Ser. No. 13/137,093, filed Jul. 20, 2011, nowU.S. Pat. No. 8,766,156, issued on Jul. 1, 2014, which in turn claimspriority from Japanese Application No.: 2010-169911, filed on Jul. 29,2010, the entire contents of which are incorporated herein by reference.

FIELD

The present disclosure relates to a solid-state imaging device and amethod of manufacturing the same, and an imaging apparatus, and moreparticularly, to a rear-surface irradiation type solid-state imagingdevice and a method of manufacturing the same, and an imaging apparatususing such a solid-state imaging device.

BACKGROUND

In the related art, in video cameras, digital still cameras, or thelike, solid-state imaging devices including a CCD (Charge CoupledDevice) or a CMOS image sensor are widely used. In these solid-stateimaging devices, alight receiving section including photodiode isprovided for each pixel, and in the light receiving section, incidentlight is photoelectrically converted and thereby a signal charge isgenerated.

In a CCD-type solid-state imaging device, the signal charge generated inthe light receiving section is transferred to a charge transferringsection having a CCD structure, and is converted into a pixel signal inan output section and then is output. On the other hand, in a CMOS-typesolid-state imaging devices, the signal charge generated in the lightreceiving section is amplified for each pixel, and the amplified signalis output as a pixel signal by a signal line.

In such a solid-state imaging device, there is a problem in thataliasing occurs inside a semiconductor substrate due to inclinedincident light or incident light that is diffusely reflected at an upperportion of the light receiving section, and thereby optical noise suchas smearing and flaring occurs.

Therefore, in JP-A-2004-140152, in regard to the CCD-type solid-stateimaging device, there is disclosed a technology for suppressing theoccurrence of smearing by forming a light shielding film provided at anupper portion of the charge transferring section in a manner to beembedded in a groove portion formed in the interface of the lightreceiving section and a read-out gate section. However, in thetechnology disclosed in JP-A-2004-140152, since the light shielding filmis formed in the groove portion formed by using a LOCOS oxide film, itis difficult to form the light shielding film at a deep portion of thesubstrate, and thereby it is difficult to reliably prevent the inclinedincident light, which is a cause of smearing, from being incident. Inaddition, since the pixel area is diminished in proportion to theembedding depth of the light shielding film, it is basically difficultto deeply embed the light shielding film.

However, in recent years, accompanying the miniaturization and loweringof power consumption of a video camera or a digital still camera, and amobile phone with camera, the CMOS-type solid-state imaging device isfrequently used. In addition, as the CMOS-type solid-state imagingdevice, a front-surface irradiation type shown in FIG. 24 and arear-surface irradiation type shown in FIG. 25 are known.

As shown in a schematic configuration diagram of FIG. 24, afront-surface irradiation type solid-state imaging device 111 isconfigured to have a pixel region 113 in which a plurality of unitpixels 116 including a photodiode PD serving as a photoelectricconversion section and a plurality of pixel transistors is formed in asemiconductor substrate 112. Although the pixel transistor is not shown,a gate electrode 114 is shown in FIG. 24 and this indicatesschematically the presence of the pixel transistor.

Each photodiode PD is separated by a device separating region 115composed of an impurity diffused layer, and a multi-layeredinterconnection layer 119 where a plurality of interconnections 118 aredisposed via an interlayer insulating film 117 are formed on afront-surface side of the semiconductor substrate 112 where the pixeltransistor is formed. The interconnection 118 is formed except for aportion corresponding to the location of the photodiode PD.

An on-chip color filter 121 and an on-chip microlens 122 aresequentially formed on the multi-layered interconnection layer 119 via aplanarized film 120. The on-chip color filter 121 is configured byarranging each color filter of, for example, red (R), green (G), andblue (B).

In the front-surface irradiation type solid-state imaging device 111, afront surface of a substrate where the multi-layered interconnectionlayer 119 is formed is set as a light receiving plane 123, and light Lis incident from the front surface side of the substrate.

On the other hand, as shown in a schematic configuration diagram of FIG.25, a rear-surface irradiation type solid-state imaging device 131 isconfigured to have the pixel region 113 in which a plurality of unitpixels 116 including a photodiode PD serving as a photoelectricconversion section and a plurality of pixel transistors are formed inthe semiconductor substrate 112. Although not shown, the pixeltransistor is formed in the substrate front-surface side, and the gateelectrode 114 is shown in FIG. 25 and this indicates schematically thepresence of the pixel transistor.

Each photodiode PD is separated by the device separating region 115composed of an impurity diffused layer, and the multi-layeredinterconnection layer 119 where a plurality of interconnections 118 aredisposed via the interlayer insulating film 117 is formed on afront-surface side of the semiconductor substrate 112 where the pixeltransistor is formed. In the rear-surface irradiation type, theinterconnection 118 may be formed regardless of the position of thephotodiode PD.

In addition, on a rear surface that the photodiode PD of thesemiconductor substrate 112 faces, an insulating layer 128, the on-chipcolor filter 121, and on-chip microlens 122 are sequentially formed.

In the rear-surface irradiation type solid-state imaging device 131, therear surface of the substrate, which is opposite to the substratefront-surface side where the multi-layered interconnection layer and thepixel transistor are formed, is set as a light receiving plane 132, andlight L may be incident from the rear surface-side of the substrate.

Increasing integration of a device through the miniaturization of thepixels has been demanded. However, the front-surface irradiation typesolid-state imaging device 111 has a configuration where the light L isreceived by the photodiode PD through the multi-layered interconnectionlayer 119. Therefore, accompanying the progress of increasingintegration and the miniaturization of the pixels, there is a problem inthat it is difficult to sufficiently secure a light receiving sectionregion due to an obstacle such as the interconnection, and therebysensitivity is decreased or shading increases.

On the other hand, in the rear-surface irradiation type solid-stateimaging device 131, the light L can be incident to the photodiode PDwithout being subjected to a restriction due to the multi-layeredinterconnection layer 119, such that it is possible to broaden theopening of the photodiode PD and thereby it is possible to realizeincreased sensitivity.

SUMMARY

Even in the case of the rear-surface irradiation type solid-stateimaging device, the optical noise caused by the inclined light is ofconcern, such that it is preferable that a light shielding film beformed between the rear surface side of the substrate that serves as alight irradiation side and the light receiving section. In this case, itmay be considered that a single layer having the light shielding film isformed in the rear surface side of the substrate that serves as thelight irradiation side, but the distance between the substrate and theon-chip lens plane becomes long in proportion to the height of the lightshielding film, such that the deterioration in focusing characteristicsis caused. In addition, in a case where focusing characteristics aredeteriorated, inclined light transmitting a color filter of anotherpixel is incident to a light receiving section of a pixel different fromthe above-described pixel, and thereby there is a problem in that acolor mixture or a decrease in sensitivity occurs.

Thus, it is desirable to provide a solid-state imaging device and amethod of manufacturing the same, and an imaging apparatus, which iscapable of suppressing optical noise such as flaring and smearing whilenot deteriorating the focusing characteristics.

According to an embodiment of the present disclosure, there is provideda solid-state imaging device including a semiconductor substrateprovided with an effective pixel region including a light receivingsection that photoelectrically converts incident light; aninterconnection layer that is provided at a plane side opposite to thelight receiving plane of the semiconductor substrate; a first grooveportion that is provided between adjacent light receiving sections andis formed at a predetermined depth from the light receiving plane sideof the semiconductor substrate; and an insulating material that isembedded in at least a part of the first groove portion.

According to another embodiment of the present disclosure, there isprovided a solid-state imaging device including a semiconductorsubstrate provided with an effective pixel region including a lightreceiving section that photoelectrically converts incident light; aninterconnection layer that is provided at a plane side opposite to thelight receiving plane of the semiconductor substrate; a first grooveportion that is provided between adjacent light receiving sections andis formed at a predetermined depth from the light receiving plane sideof the semiconductor substrate; a second groove portion that is providedin an optical black region located at the periphery of the effectivepixel region and optically shielded, and that is formed at apredetermined depth from the light receiving plane side of thesemiconductor substrate; an insulating material that is embedded in atleast a part of the first groove portion; and a light shielding materialthat is embedded in at least a part of the second groove portion.

According to still another embodiment of the present disclosure, thereis provided a solid-state imaging device including a semiconductorsubstrate provided with an effective pixel region including a lightreceiving section that photoelectrically converts incident light; aninterconnection layer that is provided at a plane side opposite to thelight receiving plane of the semiconductor substrate; a first grooveportion that is provided between adjacent light receiving sections andis formed at a predetermined depth from the light receiving plane sideof the semiconductor substrate; a third groove portion that is providedbetween the effective pixel region and an optical black region locatedat the periphery of the effective pixel region and optically shielded,and that is formed at a predetermined depth from the light receivingplane side of the semiconductor substrate; an insulating material thatis embedded in at least a part of the first groove portion; and a lightshielding material that is embedded in at least a part of the thirdgroove portion.

According to yet another embodiment of the present disclosure, there isprovided a solid-state imaging device including a semiconductorsubstrate provided with an effective pixel region including a lightreceiving section that photoelectrically converts incident light; aninterconnection layer that is provided at a plane side opposite to thelight receiving plane of the semiconductor substrate; a first grooveportion that is provided between adjacent light receiving sections andis formed at a predetermined depth from the light receiving plane sideof the semiconductor substrate; a second groove portion that is providedin an optical black region located at the periphery of the effectivepixel region and optically shielded, and that is formed at apredetermined depth from the light receiving plane side of thesemiconductor substrate; a third groove portion that is provided betweenthe effective pixel region and the optical black region and is formed ata predetermined depth from the light receiving plane side of thesemiconductor substrate; an insulating material that is embedded in atleast a part of the first groove portion; and a light shielding materialthat is embedded in at least a part of the second groove portion and atleast a part of the third groove portion.

Here, the first groove portion that is provided between adjacent lightreceiving sections and is formed at a predetermined depth from the lightreceiving plane side of the semiconductor substrate; and the insulatingmaterial that is embedded in at least a part of the first groove portionare included, such that the light receiving sections are physicallyseparated from each other and thereby it is possible to prevent a signalcharge, which is photoelectrically converted at a vicinity of a frontsurface of the semiconductor substrate, from flowing to adjacent pixels.

In addition, a second groove portion that is provided in an opticalblack region located at the periphery of the effective pixel region andoptically shielded, and that is formed at a predetermined depth from thelight receiving plane side of the semiconductor substrate; and the lightshielding material that is embedded in at least a part of the secondgroove portion are included, such that the embedded light-shielding ofthe optical black region is realized, and thereby the height of thesolid-state imaging device can be further lowered.

In addition, the third groove portion that is provided between theeffective pixel region and an optical black region and opticallyshielded, and that is formed at a predetermined depth from the lightreceiving plane side of the semiconductor substrate; and the lightshielding material that is embedded in at least a part of the thirdgroove portion, such that it is possible to suppress the sneaking of thelight to the optical black region, and thereby improvement in theaccuracy of the black level is realized.

According to still yet another embodiment of the present disclosure,there is provided a method of manufacturing a solid-state imagingdevice. The method includes forming a first groove portion having apredetermined depth from the light receiving plane side of asemiconductor substrate between adjacent light receiving sections of thesemiconductor substrate provided with an effective pixel regionincluding each of the light receiving sections that photoelectricallyconvert incident light; embedding an insulating material in at least apart of the first groove portion; and forming an interconnection layerat a plane side opposite to the light receiving plane of thesemiconductor substrate.

According to further another embodiment of the present disclosure, thereis provided a method of manufacturing a solid-state imaging device. Themethod includes forming a first groove portion having a predetermineddepth from the light receiving plane side of a semiconductor substratebetween adjacent light receiving sections of the semiconductor substrateprovided with an effective pixel region including each of the lightreceiving sections that photoelectrically convert incident light;forming a second groove portion having a predetermined depth from thelight receiving plane side of the semiconductor substrate in an opticalblack region that is located at the periphery of the effective pixelregion and is optically shielded, in addition to forming the firstgroove portion; embedding an insulating material in at least a part ofthe first groove portion; embedding a light shielding material in atleast a part of the second groove portion; and forming aninterconnection layer at a plane side opposite to the light receivingplane of the semiconductor substrate.

According to still further another embodiment of the present disclosure,there is provided a method of manufacturing a solid-state imagingdevice. The method includes forming a first groove portion having apredetermined depth from the light receiving plane side of asemiconductor substrate between adjacent light receiving sections of thesemiconductor substrate provided with an effective pixel regionincluding each of the light receiving sections that photoelectricallyconvert incident light; forming a third groove portion having apredetermined depth from the light receiving plane side of thesemiconductor substrate between the effective pixel region and anoptical black region that is located at the periphery of the effectivepixel region and is optically shielded, in addition to forming the firstgroove portion; embedding an insulating material in at least a part ofthe first groove portion; embedding a light shielding material in atleast a part of the third groove portion; and forming an interconnectionlayer at a plane side opposite to the light receiving plane of thesemiconductor substrate.

According to yet further another embodiment of the present disclosure,there is provided a method of manufacturing a solid-state imagingdevice. The method includes forming a first groove portion having apredetermined depth from the light receiving plane side of asemiconductor substrate between adjacent light receiving sections of thesemiconductor substrate provided with an effective pixel regionincluding each of the light receiving sections that photoelectricallyconvert incident light; forming a second groove portion having apredetermined depth from the light receiving plane side of thesemiconductor substrate in an optical black region that is located atthe periphery of the effective pixel region and is optically shielded,and forming a third groove portion having a predetermined depth from thelight receiving plane side of the semiconductor substrate between theeffective pixel region and the optical black region, in addition toforming the first groove portion; embedding an insulating material in atleast a part of the first groove portion; embedding a light shieldingmaterial in at least a part of the second groove portion and at least apart of the third groove portion; and forming an interconnection layerat a plane side opposite to the light receiving plane of thesemiconductor substrate.

Here, the first groove portion having a predetermined depth from thelight receiving plane side of a semiconductor substrate between adjacentlight receiving sections of the semiconductor substrate provided with aneffective pixel region including each of the light receiving sectionsthat photoelectrically convert incident light is formed, and then theinsulating material is embedded in at least a part of the first grooveportion. As a result thereof, the first groove portion that is providedbetween the adjacent light receiving sections and that is formed at apredetermined depth from the light receiving plane side of asemiconductor substrate, and the insulating material that is embedded inat least a part of the first groove portion are included. Therefore, thelight receiving sections are physically separated from each other andthereby it is possible to prevent a signal charge, which isphotoelectrically converted at a vicinity of a front surface of thesemiconductor substrate, from flowing to adjacent pixels.

In addition, the second groove portion having a predetermined depth fromthe light receiving plane side of the semiconductor substrate is formedin the optical black region that is located at the periphery of theeffective pixel region and is optically shielded, and then theinsulating material is embedded in at least a part of the second grooveportion. As a result thereof, the second groove portion that is providedin the optical black region located at the periphery of the effectivepixel region and optically shielded, and that is formed at apredetermined depth from the light receiving plane side of thesemiconductor substrate, and the light shielding material that isembedded in at least apart of the second groove portion are included.Therefore, the embedded light-shielding of the optical black region isrealized, and thereby the height of the solid-state imaging device canbe further lowered.

In addition, the third groove portion having a predetermined depth fromthe light receiving plane side of the semiconductor substrate is formedbetween the effective pixel region and the optical black region that islocated at the periphery of the effective pixel region and is opticallyshielded, and then the light shielding material is embedded in at leasta part of the third groove portion. As a result thereof, the thirdgroove portion that is provided between the effective pixel region andthe optical black region and that is formed at a predetermined depthfrom the light receiving plane side of the semiconductor substrate, andthe light shielding material that is embedded in at least a part of thethird groove portion are included. Therefore, it is possible to suppressthe sneaking of the light to the optical black region, and thereby animprovement in the accuracy of the black level is realized.

According to still yet further another embodiment of the presentdisclosure, there is provided an imaging apparatus including asolid-state imaging device including a semiconductor substrate providedwith an effective pixel region having a light receiving section thatphotoelectrically converts incident light, an interconnection layer thatis provided at a plane side opposite to the light receiving plane of thesemiconductor substrate, a first groove portion that is provided betweenadjacent light receiving sections and is formed at a predetermined depthfrom the light receiving plane side of the semiconductor substrate, andan insulating material that is embedded in at least a part of the firstgroove portion; an optical system that focuses incident light onto thelight receiving section; and a signal processing section that processesa signal charge that is photoelectrically converted in the lightreceiving section.

According to furthermore another embodiment of the present disclosure,there is provided an imaging apparatus including a solid-state imagingdevice including a semiconductor substrate provided with an effectivepixel region having a light receiving section that photoelectricallyconverts incident light, an interconnection layer that is provided at aplane side opposite to the light receiving plane of the semiconductorsubstrate, a first groove portion that is provided between adjacentlight receiving sections and is formed at a predetermined depth from thelight receiving plane side of the semiconductor substrate, a secondgroove portion that is provided in an optical black region located atthe periphery of the effective pixel region and optically shielded andthat is formed at a predetermined depth from the light receiving planeside of the semiconductor substrate, an insulating material that isembedded in at least a part of the first groove portion, and a lightshielding material that is embedded in at least a part of the secondgroove portion; an optical system that focuses incident light onto thelight receiving section; and a signal processing section that processesa signal charge that is photoelectrically converted in the lightreceiving section.

According to a further embodiment of the present disclosure, there isprovided an imaging apparatus including a solid-state imaging deviceincluding a semiconductor substrate provided with an effective pixelregion having a light receiving section that photoelectrically convertsincident light, an interconnection layer that is provided at a planeside opposite to the light receiving plane of the semiconductorsubstrate, a first groove portion that is provided between adjacentlight receiving sections and is formed at a predetermined depth from thelight receiving plane side of the semiconductor substrate, a thirdgroove portion that is provided between the effective pixel region andan optical black region located at the periphery of the effective pixelregion and optically shielded, and that is formed at a predetermineddepth from the light receiving plane side of the semiconductorsubstrate, an insulating material that is embedded in at least a part ofthe first groove portion, and a light shielding material that isembedded in at least a part of the third groove portion; an opticalsystem that focuses incident light onto the light receiving section; anda signal processing section that processes a signal charge that isphotoelectrically converted in the light receiving section.

According to a still further embodiment of the present disclosure, thereis provided an imaging apparatus including a solid-state imaging deviceincluding a semiconductor substrate provided with an effective pixelregion having a light receiving section that photoelectrically convertsincident light, an interconnection layer that is provided at a planeside opposite to the light receiving plane of the semiconductorsubstrate, a first groove portion that is provided between adjacentlight receiving sections and is formed at a predetermined depth from thelight receiving plane side of the semiconductor substrate, a secondgroove portion that is provided in an optical black region located atthe periphery of the effective pixel region and optically shielded, andthat is formed at a predetermined depth from the light receiving planeside of the semiconductor substrate, a third groove portion that isprovided between the effective pixel region and the optical black regionand is formed at a predetermined depth from the light receiving planeside of the semiconductor substrate, an insulating material that isembedded in at least a part of the first groove portion, and a lightshielding material that is embedded in at least a part of the secondgroove portion and at least a part of the third groove portion; anoptical system that focuses incident light onto the light receivingsection; and a signal processing section that processes a signal chargethat is photoelectrically converted in the light receiving section.

Here, the first groove portion that is provided between the adjacentlight receiving sections and that is formed at a predetermined depthfrom the light receiving plane side of a semiconductor substrate, andthe insulating material that is embedded in at least a part of the firstgroove portion are included. Therefore, the light receiving sections arephysically separated from each other and it is possible to prevent asignal charge, which is photoelectrically converted at a vicinity of afront surface of the semiconductor substrate, from flowing to adjacentpixels, whereby it is possible to obtain a pickup image with a highquality.

In addition, the second groove portion that is provided in the opticalblack region located at the periphery of the effective pixel region andoptically shielded, and that is formed at a predetermined depth from thelight receiving plane side of the semiconductor substrate, and the lightshielding material that is embedded in at least apart of the secondgroove portion are included. Therefore, the embedded light-shielding ofthe optical black region is realized, and thereby the height of thesolid-state imaging apparatus can be further lowered.

In addition, the third groove portion that is provided between theeffective pixel region and the optical black region and that is formedat a predetermined depth from the light receiving plane side of thesemiconductor substrate, and the light shielding material that isembedded in at least a part of the third groove portion are included.Therefore, it is possible to suppress the sneaking of the light to theoptical black region, and an improvement in the accuracy of the blacklevel is realized, whereby it is possible to obtain a pickup image witha high image quality.

According to the solid-state imaging device and the method ofmanufacturing the same, and the imaging apparatus according to theembodiments of the present disclosure, it is possible to suppressoptical noise such as flaring and smearing while not deteriorating thefocusing characteristics.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic configuration diagram illustrating an example of aCMOS-type solid-state imaging device applied to each embodiment of thepresent disclosure;

FIG. 2 is a schematic diagram illustrating a cross-sectional structureof an example of the CMOS-type solid-state imaging device applied toeach embodiment of the present disclosure;

FIG. 3 is a schematic diagram illustrating a first embodiment of thesolid-state imaging device according to the present disclosure;

FIG. 4 is a schematic diagram illustrating a modification of the firstembodiment of the solid-state imaging device according to the presentdisclosure;

FIGS. 5A to 5C are schematic diagrams (1) illustrating a method ofmanufacturing the solid-state imaging device of the first embodiment;

FIGS. 6A and 6B are schematic diagrams (2) illustrating a method ofmanufacturing the solid-state imaging device of the first embodiment;

FIG. 7 is a schematic diagram illustrating a second embodiment of thesolid-state imaging device according to the present disclosure;

FIG. 8 is a schematic diagram illustrating a light-shielding of anoptical black region in a case where embedded light-shielding is notperformed;

FIG. 9 is a schematic diagram illustrating a modification of the secondembodiment of the solid-state imaging device according to the presentdisclosure;

FIGS. 10A to 10D are schematic diagrams (1) illustrating a method ofmanufacturing the solid-state imaging device of the second embodiment;

FIGS. 11A to 11D are schematic diagrams (2) illustrating a method ofmanufacturing the solid-state imaging device of the second embodiment;

FIG. 12 is a schematic diagram illustrating a third embodiment of thesolid-state imaging device according to the present disclosure;

FIG. 13 is a schematic diagram illustrating a modification of the thirdembodiment of the solid-state imaging device according to the presentdisclosure;

FIGS. 14A to 14D are schematic diagrams (1) illustrating a method ofmanufacturing the solid-state imaging device of the third embodiment;

FIGS. 15A to 15D are schematic diagrams (2) illustrating a method ofmanufacturing the solid-state imaging device of the third embodiment;

FIG. 16 is a schematic diagram illustrating a fourth embodiment of thesolid-state imaging device according to the present disclosure;

FIG. 17 is a schematic diagram illustrating a modification of the fourthembodiment of the solid-state imaging device according to the presentdisclosure;

FIGS. 18A to 18D are schematic diagrams (1) illustrating a method ofmanufacturing the solid-state imaging device of the fourth embodiment;

FIGS. 19A to 19D are schematic diagrams (2) illustrating a method ofmanufacturing the solid-state imaging device of the fourth embodiment;

FIG. 20 is a schematic diagram illustrating an example of an imagingapparatus to which the present disclosure is applied;

FIG. 21 is a schematic diagram illustrating a modification of the firstembodiment;

FIGS. 22A and 22B are schematic diagrams illustrating an example of aplanar arrangement (coding) of an organic photoelectric conversion filmand an organic color filter layer;

FIG. 23 is a schematic diagram illustrating an example of a circuitconfiguration of a unit pixel;

FIG. 24 is a schematic diagram illustrating a CMOS-type solid-stateimaging device of a front-surface irradiation type in the related art;and

FIG. 25 is a schematic diagram illustrating a CMOS-type solid-stateimaging device of a rear-surface irradiation type in the related art.

DETAILED DESCRIPTION

Hereinafter, exemplary embodiments for carrying out the presentdisclosure (hereinafter, referred to as “embodiment”) will be described.Description will be made in the following order.

1. Schematic Configurational Example of CMOS-Type Solid-State ImagingDevice

2. First Embodiment

3. Second Embodiment

4. Third Embodiment

5. Fourth Embodiment

6. Fifth Embodiment

7. Modification

1. Schematic Configurational Example of CMOS-Type Solid-State ImagingDevice

FIG. 1 shows a schematic configuration diagram of an example of aCMOS-type solid-state imaging device applied to each embodiment of thepresent disclosure. Here, as shown in FIG. 1, a solid-state imagingdevice 1 includes a pixel region (so-called imaging region) 3 in whichpixels 2 including a plurality of photoelectric conversion devices aretwo-dimensionally disposed in a semiconductor substrate 11 (for example,a silicon substrate) in a regular manner, and a peripheral circuitsection.

Each of the pixels 2 includes for example, a photodiode serving as aphotoelectric conversion device, and a plurality of pixel transistors(so-called MOS transistor). The plurality of pixel transistors may becomposed of, for example, three transistors of a transfer transistor, areset transistor, and an amplification transistor. In addition, aselection transistor may be added to be composed of four transistors.

FIG. 23 shows a schematic diagram illustrating an example of a circuitconfiguration of two unit pixels of the pixel 2.

The unit pixel includes, for example, a photodiode 51 as thephotoelectric conversion device, and includes four transistors of atransfer transistor 52, an amplification transistor 53, an addresstransistor 59, and a reset transistor 55 as active devices with respectto this one photodiode.

The photodiode 51 photoelectrically converts incident light to electriccharges (here, electrons) with an amount corresponding to an amount oflight. The transfer transistor 52 is connected between the photodiode 51and a floating diffusion FD. In addition, a driving signal is applied toa gate (transfer gate) of transfer transistor via a drivinginterconnection 56, such that electrons, which are photoelectricallyconverted at the photodiode 51, are transferred to the floatingdiffusion FD.

A gate of the amplification transistor 53 is connected to the floatingdiffusion FD. The amplification transistor 53 is connected to a verticalsignal line 57 via the address transistor 54, and makes up a sourcefollower together with a constant current source I outside the pixelsection. When an address signal is applied to a gate of the addresstransistor 54 via a driving interconnection 58 and the addresstransistor 54 is turned on, the amplification transistor 53 amplifies apotential of the floating diffusion FD and outputs a voltagecorresponding to the potential to a vertical signal line 57. A voltageoutput from each pixel is output to an S/H·CDS circuit through thevertical signal line 57.

The reset transistor 55 is connected between a power source Vdd and thefloating diffusion FD. A reset signal is applied to a gate of the resettransistor 55 via a driving interconnection 59, such that the potentialof the floating diffusion FD is reset to the power source potential Vdd.

Since each gate of the transfer transistor 52, the address transistor54, and the reset transistor 55 is connected in a row unit, theabove-described operations are simultaneously performed with respect toeach pixel for one row.

In addition, the pixel 2 may adopt a sharing pixel structure. Thissharing pixel structure includes a plurality of photodiodes, a pluralityof transfer transistors, one shared floating diffusion, and each sharingother pixel transistors one by one.

The peripheral circuit section includes a vertical driving circuit 4,column signal processing circuits 5, a horizontal driving circuit 6, anoutput circuit 7, a control circuit 8, or the like.

The control circuit 8 receives data for giving an instruction such as aninput clock and an operation mode, or outputs data such as internalinformation of the solid-state imaging device. That is, the controlcircuit 8 generates a clock signal or a control signal that becomes areference of an operation of the vertical driving circuit 4, the columnsignal processing circuits 5, the horizontal driving circuit 6, or thelike, based on a vertical synchronization signal, a horizontalsynchronization signal, and a master clock. In addition, these signalsare input to the vertical driving circuit 4, the column signalprocessing circuits 5, the horizontal driving circuit 6, or the like.

The vertical driving circuit 4 includes, for example, a shift register,selects a pixel driving interconnection, supplies a pulse for driving apixel to the selected pixel driving interconnection, and drives thepixel in a row unit. That is, the vertical driving circuit 9 selectivelyscans each pixel 2 of the pixel region 3 in a row unit sequentially in avertical direction, and supplies a pixel signal to the column signalprocessing circuits 5 via a vertical signal line 9 based on a signalcharge generated according to an amount of light received, for example,in the photodiode serving as an electric conversion device of each pixel2.

The column signal processing circuits 5 are disposed, for example, foreach column of the pixel 2, and perform a signal processing such asnoise removal for each pixel column with respect to signals output fromthe pixels 2 of one row. That is, the column signal processing circuits5 perform a signal processing such as a CDS for removing a fixed patternnoise unique to the pixel 2, signal amplification, and AD conversion. Ahorizontal selection switch (not shown) is connected and providedbetween output stages of the column signal processing circuits 5 and thehorizontal signal line 10.

The horizontal driving circuit 6 includes, for example, a shift registerand sequentially outputs a horizontal scanning pulse, and therebyselects in order each of column signal processing circuits 5 and outputsa pixel signal supplied from each of the column signal processingcircuit 5 to the horizontal signal line 10.

The output circuit 7 performs a signal processing with respect tosignals sequentially supplied from each of the column signal processingcircuits 5 via the horizontal signal line 10, and outputs the processedsignals. For example, only buffering may be performed, or black leveladjustment, row variation correction, various digital signal processes,or the like may be performed. An input and output terminal 12 exchangesa signal with the outside.

FIG. 2 a schematic diagram illustrating a cross-sectional structure ofan example a CMOS-type solid-state imaging device applied to eachembodiment of the present disclosure. A CMOS-type solid-state imagingdevice 21 shown in FIG. 2 includes, for example, a pixel region(so-called an imaging region) 23 where a plurality of pixels arearranged, and a peripheral circuit section that is disposed at theperiphery of the pixel region (not shown in FIG. 2), which are formed ina semiconductor substrate 22 made of, for example, silicon.

The pixel region 23 includes an effective pixel region 23A that actuallyreceives light, amplifies a signal charge generated by a photoelectricconversion, and reads out it by the column signal processing circuit 5,and an optical black region 23B for outputting an optical black thatbecomes a reference for the black level. In addition, the optical blackregion 23B is formed at an outer circumferential part of the effectivepixel region 23A.

The unit pixel 24 includes a photodiode PD serving as a photoelectricconversion section and a plurality of pixel transistors Tr. Thephotodiode PD is formed across the entire region in the thicknessdirection of the semiconductor substrate 22, and is configured as a pnconjunction type photodiode by an n-type semiconductor region 25 and ap-type semiconductor region 26 facing the front and rear surfaces of thesubstrate. In addition, the p-type semiconductor region facing the frontand rear surfaces of the substrate also functions as a hole chargeaccumulation region for suppressing a dark current.

Each pixel 24 including the photodiode PD and the pixel transistor Tr isseparated by a device separating region 27 formed in the p-typesemiconductor region. The pixel transistor Tr is configured by formingn-type source and drain regions (not shown) in p-type semiconductor wellregion 28 formed at a front-surface side 22A of the semiconductorsubstrate 22, and forming a gate electrode 29 on the front surface ofthe substrate between the n-type source and drain regions via a gateinsulating film. In addition, in FIG. 2, a plurality of pixeltransistors are represented by one pixel transistor Tr and areschematically shown by the gate electrode 29.

On the front surface 22A of the semiconductor substrate 22, so-calledmulti-layered interconnection layer 33 where a plurality ofinterconnections 32 are disposed via an interlayer insulating film 31 isformed. Light is not incident to the multi-layered interconnection layer33, such that the layout of the interconnections 32 can be freely set.

In addition, on the rear surface 22B of the semiconductor substrate 22,an on-chip color filter 42 and an on-chip microlens 43 are sequentiallyformed. In addition, as the on-chip color filter 42, for example, acolor filter of a Bayer array may be used, and the on-chip microlens 43may be made of, for example, an organic material such as a resin.

In addition, light L is incident from the rear-surface 22B side of thesubstrate, and is focused at the on-chip microlens 43 and is received byeach photodiode PD.

2. First Embodiment [Configurational Example of Solid-State ImagingDevice]

FIG. 3 shows a schematic diagram illustrating a first embodiment of asolid-state imaging device according to the present disclosure. Thesolid-state imaging device according to this embodiment includes a firstgroove portion 61 that has a line width of 100 to 300 nm and that isformed in the device separating region 27 of the rear surface 22B sideof the substrate, which serves as a light receiving plane 34 of thephotodiode PD, from the rear-surface 22B side of the semiconductorsubstrate 22. In addition, the first groove portion 61 is formed in alattice shape to surround each pixel 24 in a plan view.

In addition, a high-dielectric material film 62 made of a hafnium oxide(HfO₂) film is formed on the rear surface 22B of the semiconductorsubstrate 22, and the high-dielectric material film 62 is formed on aside surface and the bottom surface of the first groove portion 61.Furthermore, an insulating material 63 made of silicon dioxide isembedded in the first groove portion 61 via the high-dielectric materialfilm 62.

In the rear-surface irradiation type solid-state imaging device 21according to the first embodiment, adjacent light receiving sections arephysically separated by the first groove portion 61. Therefore, it ispossible to suppress a signal charge, which is photoelectricallyconverted at a vicinity of the rear surface of the semiconductorsubstrate 22, from flowing to adjacent pixels and it is possible todiminish an optical color mixture that may occur between the adjacentpixels.

In addition, in a case where the first groove portion 61 is formed inthe device separating region 27, there is a possibility of a pinningdeviation occurring at a peripheral part of the first groove portion 61due to impurity activation through physical damage or ion irradiationonto a side wall and the bottom surface of the first groove portion 61.In regard to such a problem, in the rear-surface irradiation typesolid-state imaging device 21 according to the first embodiment, thehigh-dielectric material film 62 having a substantial fixed charge isformed on the side wall and the bottom surface of the first grooveportion 61, and thereby it is possible to suppress the pinningdeviation.

[Modification]

In the first embodiment, description is made with respect to a casewhere the insulating material 63 is embedded in only the inside of thefirst groove 61 as an example, but as shown in FIG. 4, the insulatingmaterial 63 may be provided on the entire surface of the high-dielectricmaterial film 62.

[Example of Method of Manufacturing Solid-State Imaging Device]

FIGS. 5A to 6B illustrate a method of manufacturing the solid-stateimaging device 21 of the first embodiment. In addition, only across-sectional structure of a main part is shown in FIGS. 5A to 6B, andwith respect to reference numerals of omitted parts, reference is madeto FIG. 2.

In the method of manufacturing the solid-state imaging device 21 of thefirst embodiment, first, the photodiodes PD corresponding to each pixelseparated by the device separating region 27 of the p-type semiconductorregion is formed in a region where a pixel region of the siliconsemiconductor substrate 22 is to be formed.

In addition, the photodiode PD is formed to have a pn conjunctioncomposed of the n-type semiconductor region 25 formed across the entireregion in the substrate thickness direction, and the p-typesemiconductor region 26 that comes into contact with the n-typesemiconductor region 25 and faces the front and rear surfaces 22A and22B of the substrate.

The p-type semiconductor well region 28, which comes into contact withthe device separating region 27, is formed in a region of the frontsurface 22A of the substrate, which corresponds to each pixel, and aplurality of pixel transistors Tr are formed in the p-type semiconductorwell region 28, respectively. In addition, each of the pixel transistorsTr is formed by source and drain regions, a gate insulating film, and agate electrode 29.

In addition, the multi-layered interconnection layer 33 whereinterconnections 32 of a plurality of layers are disposed via theinterlayer insulating film 31 is formed above the front surface 22A ofthe substrate.

Next, as shown in FIG. 5A, a positive-type photosensitive resist film 91is formed on the rear surface 22B of the semiconductor substrate 22, andthe patterning is performed using a general purpose photolithographytechnique in a manner such that an opening region having a line width of100 to 300 nm is formed in the separating region 27.

Subsequently, as shown in FIG. 5B, through a dry etching usingSF₆/O₂-based gas, the semiconductor substrate 22 is dug to a depth ofapproximately 400 nm using the resist film 91 as a mask, and thereby thefirst groove portion 61 is formed. Then, the resist film 91 is removed.

Next, as shown in FIG. 5C, a hafnium oxide film (high-dielectricmaterial film 62) is formed on the rear surface 22B of the semiconductorsubstrate 22 with a thickness of 50 nm by using a sputtering method.Furthermore, as shown in FIG. 6A, a silicon dioxide film (insulatingfilm 63) is formed with a thickness of 200 nm on the hafnium oxide filmby using a CVD method. As a result thereof, the first groove portion 61is embedded with the hafnium oxide film and the silicon dioxide film.

Next, as shown in FIG. 6B, a dry etching using CF₄/O₂-based gas isperformed, and thereby the silicon dioxide other than the silicondioxide embedded in first groove portion 61 is removed.

Then, the on-chip color filter 42 and the on-chip microlens 43 of, forexample, a Bayer array are sequentially formed on the rear surface 22Bof the semiconductor substrate 22. By doing so, it is possible to obtainthe solid-state imaging device 21 of the first embodiment.

3. Second Embodiment [Configurational Example of Solid-State ImagingDevice]

FIG. 7 shows a schematic diagram illustrating a second embodiment of thesolid-state imaging device according to the present disclosure. Thesolid-state imaging device according to this embodiment includes a firstgroove portion 61 that has a line width of 100 to 300 nm and that isformed in the device separating region 27 of the rear surface 22B of thesubstrate, which serves as the light receiving plane 34 of thephotodiode PD, from the rear-surface 22B side. In addition, the firstgroove portion 61 is formed in a lattice shape to surround each pixel 24in a plan view.

In addition, the solid-state imaging device according to this embodimentincludes a second groove portion 64 that has a line width ofapproximately 500 μm and that is formed in the optical black region 23Bof the rear surface 22B of the substrate, which serves as the lightreceiving plane 34 of the photodiode PD, from the rear-surface 22B sideof the semiconductor substrate 22.

In addition, a high-dielectric material film 62 made of a hafnium oxide(HfO₂) film is formed on the rear surface 22B of the semiconductorsubstrate 22, and the high-dielectric material film 62 is formed on aside surface and the bottom surface of the first groove portion 61, anda side surface and the bottom surface of the second groove 64.

In addition, an insulating material 63 made of silicon dioxide isembedded in the first groove portion 61 via the high-dielectric materialfilm 62. Meanwhile, an insulating material 63 made of silicon dioxideand a light shielding material 65 made of tungsten are embedded in thesecond groove portion 64 via the high-dielectric material film 62.

In the rear-surface irradiation type solid-state imaging device 21according to the second embodiment, the optical black region 23B isprovided with an embedded light-shielding structure configured byembedding the light shielding material 65 in the second groove portion64, such that the lowering of the height of the solid-state imagingdevice can be realized.

That is, in a black level definition, it is necessary to forma filmhaving a light shielding property in the optical black region 23B, andin a case where the embedded light-shielding is not performed, as shownin FIG. 8, it is necessary to form the light shielding film 66 on therear surface 22B of the semiconductor substrate 22. In this case, due tothe thickness of the light shielding film 66, the lowering of the heightis interrupted. Conversely, in the rear-surface irradiation typesolid-state imaging device 21 according to this embodiment, since theembedded light-shielding is adopted, the lowering of the height isrealized, the distance from the on-chip microlens 43 to the photodiodePD becomes short, a light incidence efficiency is improved, and theprevention of the color mixture is further realized.

In the rear-surface irradiation type solid-state imaging device 21according to the second embodiment, since adjacent light receivingsections are physically separated by the first groove portion 61, theoptical color mixture that may occur between adjacent pixels can bediminished similarly to the first embodiment.

In addition, the high-dielectric material film 62 having a substantialfixed charge is formed on the side wall and the bottom surface of thefirst groove portion 61, and the side wall and the bottom surface of thesecond groove portion 64, such that it is possible to suppress thepinning deviation similarly to the first embodiment.

[Modification]

In the second embodiment, description is made with respect to a Casewhere the insulating material 63 and the light shielding material 65 areembedded in the second groove portion 64 via the high-dielectricmaterial film 62 as an example, but the insulating material 63 is notnecessarily required to be embedded. For example, as shown in FIG. 9,only the light shielding material 65 may be embedded in the secondgroove portion 64 via the high-dielectric material film 62.

[Example of Method of Manufacturing Solid-State Imaging Device]

FIGS. 10A to 11D illustrate a method of manufacturing the solid-stateimaging device 21 of the second embodiment. In addition, only across-sectional structure of a main part is shown in FIGS. 10A to 11D,and with respect to reference numerals of omitted parts, reference ismade to FIG. 2.

In the method of manufacturing the solid-state imaging device 21 of thesecond embodiment, the photodiode PD separated by the device separatingregion 27, the p-type semiconductor well region 28, the pixel transistorTr, and the multi-layered interconnection layer 33 are formed, similarlyto the first embodiment.

Next, as shown in FIG. 10A, after a positive-type photosensitive resistfilm 91 is formed on the rear surface 22B of the semiconductor substrate22, the resist film 91 is patterned using a general purposephotolithography technique. Specifically, the patterning is performed ina manner such that an opening region having a line width of 100 to 300nm is formed in the device separating region 27, and an opening regionhaving a line width of approximately 500 μm is formed in the opticalblack region 23B.

Subsequently, as shown in FIG. 10B, through a dry etching usingSF₆/O₂-based gas, the semiconductor substrate 22 is dug in a depth ofapproximately 400 nm using the resist film 91 as a mask, and thereby thefirst groove portion 61 and the second groove portion 64 are formed.Then, the resist film 91 is removed.

Next, as shown in FIG. 10C, a hafnium oxide film (high-dielectricmaterial film 62) is formed on the rear surface 22B of the semiconductorsubstrate 22 with a thickness of 50 nm by using a sputtering method.Furthermore, as shown in FIG. 10D, a silicon dioxide film (insulatingfilm 63) is formed with a thickness of 200 nm on the hafnium oxide filmby using a CVD method. As a result thereof, the first groove portion 61is embedded with the hafnium oxide film and the silicon dioxide film. Inaddition, the second groove portion 64 becomes a state of not beingembedded.

Subsequently, as shown in FIG. 11A, the silicon dioxide film (insulatingfilm 63) that is formed on the bottom surface of the second grooveportion 64 of the optical black region 23B is covered with a resist film92, a dry etching using CF₄/O₂-based gas is performed, and thereby theresist film 92 is removed. As a result thereof, as shown in FIG. 11B,the silicon dioxide other than the silicon dioxide embedded in the firstgroove portion 61 and the second groove portion 64 is removed.

Next, as shown FIG. 11C, a light shielding film 93 made of tungsten isformed with a thickness of approximately 300 nm by a CVD method, and thelight shielding film 93 formed on the bottom surface of the secondgroove portion 64 of the optical black region 23B is covered with aresist film 94.

Consequently, as shown in FIG. 11D, a dry etching by SF₆/O₂-based gas isperformed using the resist film 94 as a mask, and the exposed lightshielding film 93 is etched and is removed. As a result thereof, whenthe resist film 94 is removed, the second groove portion 64 of theoptical black region 23B is embedded with the hafnium oxide film, thesilicon dioxide film, and the light shielding film.

Then, the on-chip color filter 42 and the on-chip microlens 43 of, forexample, a Bayer array are sequentially formed on the rear surface 22Bof the semiconductor substrate 22. By doing so, it is possible to obtainthe solid-state imaging device 21 of the second embodiment.

4. Third Embodiment [Configurational Example of Solid-State ImagingDevice]

FIG. 12 shows a schematic diagram illustrating a third embodiment of thesolid-state imaging device according to the present disclosure. Thesolid-state imaging device according to this embodiment includes a firstgroove portion 61 that has a line width of 100 to 300 nm and that isformed in the device separating region 27 of the rear surface 22B of thesubstrate, which serves as the light receiving plane 34 of thephotodiode PD, from the rear-surface 22B side of the semiconductorsubstrate 22. In addition, the first groove portion 61 is formed in alattice shape to surround each pixel 24 in a plan view.

In addition, the solid-state imaging device according to this embodimentincludes a third groove portion 67 that is formed in a region betweenthe effective pixel region 23A and the optical black region 23B of therear surface 22B of the substrate, which serves as the light receivingplane 34 of the photodiode PD, from the rear surface 22B of thesemiconductor substrate 22.

In addition, a high-dielectric material film 62 made of a hafnium oxide(HfO₂) film is formed on the rear surface 22B of the semiconductorsubstrate 22, and the high-dielectric material film 62 is formed on aside surface and the bottom surface of the first groove portion 61, anda side surface and the bottom surface of the third groove 67.

In addition, an insulating material 63 made of silicon dioxide isembedded in the first groove portion 61 via the high-dielectric materialfilm 62. On the other hand, an insulating material 63 made of silicondioxide and a light shielding material 65 made of tungsten are embeddedin the third groove portion 67 via the high-dielectric material film 62.

In rear-surface irradiation type solid-state imaging device 21 accordingto the third embodiment, the region between the effective pixel region23A and the optical black region 23B is provided with an embeddedlight-shielding structure configured by embedding the light shieldingmaterial 65 in the third groove portion 67, such that it is possible torealize an increase in the black level. Specifically, the embeddedlight-shielding structure is provided between the effective pixel region23A and the optical black region 23B, such that it is possible tosuppress the sneaking of light into the optical black region 23B, andthereby the black level can be improved.

In addition, in the rear-surface irradiation type solid-state imagingdevice 21 according to the third embodiment, since adjacent lightreceiving sections are physically separated by the first groove portion61, the optical color mixture that may occur between adjacent pixels canbe diminished similarly to the first embodiment.

In addition, the high-dielectric material film 62 having a substantialfixed charge is formed on the side wall and the bottom surface of thefirst groove portion 61, and the side wall and the bottom surface of thethird groove portion 67, such that it is possible to suppress thepinning deviation similarly to the first embodiment.

[Modification]

In the third embodiment, description is made with respect to a casewhere the insulating material 63 and the light shielding material 65 areembedded in the third groove portion 67 via the high-dielectric materialfilm 62 as an example, but the insulating material 63 is not necessarilyrequired to be embedded. For example, as shown in FIG. 13, only thelight shielding material 65 may be embedded in the third groove portion67 via the high-dielectric material film 62.

[Example of Method of Manufacturing Solid-State Imaging Device]

FIGS. 14A to 15C illustrate a method of manufacturing the solid-stateimaging device 21 of the third embodiment. In addition, only across-sectional structure of a main part is shown in FIGS. 14A to 15C,and with respect to reference numerals of omitted parts, reference ismade to FIG. 2.

In the method of manufacturing the solid-state imaging device 21 of thethird embodiment, the photodiode PD separated by the device separatingregion 27, the p-type semiconductor well region 28, the pixel transistorTr, and the multi-layered interconnection layer 33 are formed, similarlyto the first embodiment.

Next, as shown in FIG. 14A, after a positive-type photosensitive resistfilm 91 is formed on the rear surface 22B of the semiconductor substrate22, the resist film 91 is patterned using a general purposephotolithography technique. Specifically, the patterning is performed ina manner such that an opening region having a line width of 100 to 300nm is formed in the device separating region 27, and an opening regionis formed between the effective pixel region 23A and the optical blackregion 23B.

Subsequently, as shown in FIG. 14B, through a dry etching usingSF₆/O₂-based gas, the semiconductor substrate 22 is dug in a depth ofapproximately 400 nm using the resist film 91 as a mask, and thereby thefirst groove portion 61 and the third groove portion 67 are formed.Then, the resist film 91 is removed.

Next, as shown in FIG. 14C, a hafnium oxide film (high-dielectricmaterial film 62) is formed on the rear surface 22B of the semiconductorsubstrate 22 with a thickness of 50 nm by using a sputtering method.Furthermore, as shown in FIG. 14D, a silicon dioxide film (insulatingfilm 63) is formed with a thickness of 200 nm on the hafnium oxide filmby using a CVD method. As a result thereof, the first groove portion 61is embedded with the hafnium oxide film and the silicon dioxide film. Inaddition, the third groove portion 67 becomes a state of not beingembedded.

Subsequently, as shown in FIG. 15A, the silicon dioxide film (insulatingfilm 63) that is formed on the bottom surface of the third grooveportion 67 is covered with a resist film 92, a dry etching usingCF4/O₂-based gas is performed, and then the resist film 92 is removed.As a result thereof, as shown in FIG. 15B, the silicon dioxide otherthan the silicon dioxide embedded in the first groove portion 61 and thethird groove portion 67 is removed.

Next, as shown in FIG. 15C, a light shielding film 93 made of tungstenis formed with a thickness of approximately 300 nm by a CVD method, andthen, as shown in FIG. 15D, the light shielding film 93 formed on thebottom surface of the third groove portion 67 is covered with a resistfilm 94.

Next, a dry etching by SF₆/O₂-based gas is performed using the resistfilm 94 as a mask, and the exposed light shielding film 93 is etched andis removed. As a result thereof, when the resist film 94 is removed, thethird groove portion 67 is embedded with the hafnium oxide film, thesilicon dioxide film, and the light shielding film.

Then, the on-chip color filter 42 and the on-chip microlens 43 of, forexample, a Bayer array are sequentially formed on the rear surface 22Bof the semiconductor substrate 22. By doing so, it is possible to obtainthe solid-state imaging device 21 of the third embodiment.

5. Fourth Embodiment [Configurational Example of Solid-State ImagingDevice]

FIG. 16 shows a schematic diagram illustrating a fourth embodiment ofthe solid-state imaging device according to the present disclosure. Thesolid-state imaging device according to this embodiment includes a firstgroove portion 61 that has a line width of 100 to 300 nm and that isformed in the device separating region 27 of the rear surface 22B of thesubstrate, which serves as the light receiving plane 34 of thephotodiode PD, from the rear-surface 22B side of the semiconductorsubstrate 22. In addition, the first groove portion 61 is formed in alattice shape to surround each pixel 24 in a plan view.

In addition, the solid-state imaging device according to this embodimentincludes a second groove 64 that has a line width of approximately 500μm and that is formed in the optical black region 23B of the rearsurface 22B of the substrate, which serves as the light receiving plane34 of the photodiode PD, from the rear surface 22B side of thesemiconductor substrate 22.

In addition, the solid-state imaging device according to this embodimentincludes a third groove portion 67 that is formed in a region betweenthe effective pixel region 23A and the optical black region 23B of therear surface 22B of the substrate, which serves as the light receivingplane 34 of the photodiode PD, from the rear surface 22B of thesemiconductor substrate 22.

In addition, a high-dielectric material film 62 made of a hafnium oxide(HfO₂) film is formed on the rear surface 22B of the semiconductorsubstrate 22, and the high-dielectric material film 62 is formed on aside surface and the bottom surface of the first groove portion 61, aside surface and the bottom surface of the second groove 64, and a sidesurface and the bottom surface of the third groove 67.

In addition, an insulating material 63 made of silicon dioxide isembedded in the first groove portion 61 via the high-dielectric materialfilm 62. On the other hand, an insulating material 63 made of silicondioxide and a light shielding material 65 made of tungsten are embeddedin the second groove 64 and the third groove portion 67 via thehigh-dielectric material film 62.

In addition, in the rear-surface irradiation type solid-state imagingdevice 21 according to the fourth embodiment, since adjacent lightreceiving sections are physically separated by the first groove portion61, the optical color mixture that may occur between adjacent pixels canbe diminished similarly to the first embodiment.

In addition, the high-dielectric material film 62 having a substantialfixed charge is formed on the side wall and the bottom surface of thefirst groove portion 61, the side wall and the bottom surface of thesecond groove portion 64, and the side wall and the bottom surface ofthe third groove portion 67, such that it is possible to suppress thepinning deviation similarly to the first embodiment.

In addition, in the rear-surface irradiation type solid-state imagingdevice 21 according to the fourth embodiment, the embeddedlight-shielding structure is formed in the optical black region 23B,such that the lowering of the height of the solid-state imaging devicecan be realized similarly to the second embodiment.

In addition, in the rear-surface irradiation type solid-state imagingdevice 21 according to the fourth embodiment, the embeddedlight-shielding configured by embedding the light shielding material 65in the third groove portion 67 is provided, such that it is possible torealize an increase in the black level similarly to the thirdembodiment.

[Modification]

In the fourth embodiment, description is made with respect to a casewhere the insulating material 63 and the light shielding material 65 areembedded in the second groove portion 69 and the third groove portion 67via the high-dielectric material film 62 as an example, but theinsulating material 63 is not necessarily required to be embedded. Forexample, as shown in FIG. 17, only the light shielding material 65 maybe embedded in the second groove portion 69 and the third groove portion67 via the high-dielectric material film 62.

[Example of Method of Manufacturing Solid-State Imaging Device]

FIGS. 18A to 19D illustrate a method of manufacturing the solid-stateimaging device 21 of the fourth embodiment. In addition, only across-sectional structure of a main part is shown in FIGS. 18A to 19D,and with respect to reference numerals of omitted parts, reference ismade to FIG. 2.

In the method of manufacturing the solid-state imaging device 21 of thefourth embodiment, the photodiode PD separated by the device separatingregion 27, the p-type semiconductor well region 28, the pixel transistorTr, and the multi-layered interconnection layer 33 are formed, similarlyto the first embodiment.

Next, as shown in FIG. 18A, after a positive-type photosensitive resistfilm 91 is formed on the rear surface 22B of the semiconductor substrate22, the resist film 91 is patterned using a general purposephotolithography technique. Specifically, the patterning is performed ina manner such that an opening region having a line width of 100 to 300nm is formed in the device separating region 27, and an opening regionhaving a line width of approximately 500 μm is formed in the opticalblack region 23B. In addition, when the patterning is performedsimultaneously, an opening region is also formed between the effectivepixel region 23A and the optical black region 23B.

Subsequently, as shown in FIG. 18B, through a dry etching usingSF₆/O₂-based gas, the semiconductor substrate 22 is dug in a depth ofapproximately 400 nm using the resist film 91 as a mask, and thereby thefirst groove portion 61, the second groove portion 64, and the thirdgroove portion 67 are formed. Then, the resist film 91 is removed.

Next, as shown in FIG. 18C, a hafnium oxide film (high-dielectricmaterial film 62) is formed on the rear surface 22B of the semiconductorsubstrate 22 with a thickness of 50 nm by using a sputtering method.Furthermore, as shown in FIG. 18D, a silicon dioxide film (insulatingfilm 63) is formed with a thickness of 200 nm on the hafnium oxide filmby using a CVD method. As a result thereof, the first groove portion 61is embedded with the hafnium oxide film and the silicon dioxide film. Inaddition, the second groove portion 64 and the third groove portion 67become a state of not being embedded.

Subsequently, as shown in FIG. 19A, the silicon dioxide film (insulatingfilm 63) that is formed on the bottom surface of each of the secondgroove portion 64 and the third groove portion 67 is covered with aresist film 92, a dry etching using CF₄/O₂-based gas is performed, andthereby the resist film 92 is removed. As a result thereof, as shown inFIG. 19B, the silicon dioxide other than the silicon dioxide embedded inthe first groove portion 61, the second groove portion 64, and the thirdgroove portion 67 is removed.

Next, as shown FIG. 19C, a light shielding film 93 made of tungsten isformed with a thickness of approximately 300 nm by a CVD method, and asshown in FIG. 19D, light shielding film 93 formed on the bottom surfaceof each of the second groove portion 64 and the third groove portion 67is covered with resist film 94.

Next, a dry etching by SF₆/O₂-based gas is performed using the resistfilm 94 as a mask, and the exposed light shielding film 93 is etched andis removed. As a result thereof, when the resist film 94 is removed, thesecond groove portion 64 of the optical black region 23B is embeddedwith the hafnium oxide film, the silicon dioxide film, and the lightshielding film. In addition, the third groove portion 67 that is formedin a region between the effective pixel region 23A and the optical blackregion 23B is also embedded by the hafnium oxide film, the silicondioxide film, and the light shielding film.

Then, the on-chip color filter 42 and the on-chip microlens 43 of, forexample, a Bayer array are sequentially formed on the rear surface 22Bof the semiconductor substrate 22. By doing so, it is possible to obtainthe solid-state imaging device 21 of the second embodiment.

6. Fifth Embodiment [Configuration of Camera]

FIG. 20 shows a schematic diagram illustrating a camera 77 that is anexample of an imaging apparatus to which the present disclosure isapplied. In addition, the camera 77 shown in FIG. 20 uses the abovedescribed solid-state imaging device of the first to fourth embodimentsas an imaging device.

In the camera 77 to which the present disclosure is applied, light froman object (not shown), is incident to an imaging area of a solid-stateimaging device 73 via an optical system such as the lens 71, and amechanical shutter 72. In addition, the mechanical shutter 72 blocks outthe incidence of light to the imaging area of the solid-state imagingdevice 73 and determines an exposure period.

Here, as the solid-state imaging device 73, the above-describedsolid-state imaging device 1 according to the first to fourthembodiments is used, and the solid-state imaging device 73 is driven bya driving circuit 74 including a timing generating circuit, a drivingsystem, or the like.

In addition, an output signal of the solid-state imaging device 73 issubjected to various signal processes by a next stage signal processingcircuit 75, and is derived to the outside as an imaging signal, thederived imaging signal is stored in a storage medium such as a memory,and is output to a monitor.

In addition, an opening and closing control of the mechanical shutter72, a control of the driving circuit 74, a control of the signalprocessing circuit 75, or the like is performed by a system controller76.

In the camera to which the present disclosure is applied, thesolid-state imaging device to which the above-described presentdisclosure is applied is adopted, such that it is possible to suppressthe occurrence of an optical color mixture, and it is possible to obtaina pickup image having a high image quality.

7. Modification [In Regard to Color Filter]

In the above-described first to fifth embodiments, description is madewith respect to a case where the color filter 42 arranged in a RGB Bayerarray is used, but an organic photoelectric conversion film may be usedto realize a solid-state imaging device with high accuracy by improvingcolor reproducibility.

FIG. 21 shows a schematic diagram illustrating a modification of thefirst embodiment. In the solid-state imaging device 21 shown in FIG. 21,an organic photoelectric conversion film 82 is formed on the rearsurface 22B of the semiconductor substrate 22, and an organic colorfilter layer 84 is further formed via a separation layer 83.

The organic color filter layer 84 is formed correspondingly to thephotodiode PD, and for example, to read out blue (B) and red (R), anorganic color filter layer 84C of Cyan and organic color filter layer84Y of Yellow are disposed in a checkerboard pattern. In addition, anon-chip microlens 43, which focuses the incident light to eachphotodiode PD, is formed on the organic color filter layer 84.

As the green (G)-based dye of the organic photoelectric conversion film82, rhodamine-based dye, phthalocyanine derivative, quinacridone,eosin-Y, meracyanine-based dye, or the like may be exemplified as anexample thereof.

In the solid-state imaging device 21 of this modification, green (G) isextracted from the organic photoelectric film 82, blue (B) and red (R)are extracted from a combination of the organic color filter layers 84of Cyan and Yellow.

Hereinafter, an example of a planar arrangement (coding) of the organicphotoelectric conversion film 82 and the organic color filter layer 84will be described with reference to FIGS. 22A and 22B.

As shown in FIG. 22A, green (G) made of the organic photoelectricconversion film 82 is arranged in all pixels. In addition, as shown inFIG. 22B, Cyan and Yellow are arranged in a so-called checkerboardpattern. A spectroscopy of blue (B) and red (R) is accomplished by thefollowing principle.

Specifically, in regard to blue (B), a red (R) component is absorbed bythe organic color filter layer 84C of Cyan and is removed, and then agreen (G) component is absorbed by the organic photoelectric conversionfilm 82 of green (G) and is removed, and accordingly, the blue (B) canbe extracted as a remaining blue (B) component.

On the other hand, in regard to red (R), a blue component (B) isabsorbed by the organic color filter layer 84Y of Yellow and is removed,and then a green (G) component is absorbed by the organic photoelectricconversion film 82 of green (G) and is removed, and accordingly, the red(R) can be extracted as a remaining red (R) component.

By the above-described configuration, a color signal separated intogreen (G), blue (B), and red (R) can be output.

In addition, since the organic color filter layer 840 of Cyan and theorganic color filter layer 84Y of Yellow are arranged in a so-calledcheckerboard pattern, a spatial brightness or a chromatic resolution isdiminished a little. However, it is possible to remarkably improve thecolor reproducibility.

[In Regard to Semiconductor Substrate]

In the above-described first to fourth embodiments, description is madewith respect to a case where the semiconductor substrate is made ofsilicon as an example, but the semiconductor substrate is notnecessarily required to be a silicon substrate, and the semiconductorsubstrate may be made another semiconductor material.

[In Regard to High-Dielectric Material Film]

In the above-described first to fourth embodiments, description is madewith respect to a case where a hafnium oxide film is used as thehigh-dielectric material film 62 as an example, but it is notnecessarily required to use the hafnium oxide film. That is, as long asthe pinning deviation caused by the forming of the first groove portion61, the second groove portion 64, or the third groove portion 67 can besufficiently suppressed, it is not necessarily required to use thehafnium oxide film. For example, a tantalum pentoxide (Ta₂O₅) film, azirconium dioxide (ZrO₂) film, or the like may be used.

[In Regard to Embedded Light-Shielding]

In the above-described second to fourth embodiments, description is madewith respect to a case where tungsten is used as the light shieldingmaterial 65 as an example, but is the use of tungsten not necessarilyrequired. That is, as long as the embedded light-shielding structure canbe sufficiently configured, for example, aluminum or the like may beembedded.

The present disclosure contains subject matter related to that disclosedin Japanese Priority Patent Application JP 2010-169911 filed in theJapan Patent Office on Jul. 29, 2010, the entire contents of which ishereby incorporated by reference.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

1-30. (canceled)
 31. An imaging device, comprising: a semiconductorsubstrate having an effective pixel region including a first pluralityof photoelectric conversion elements configured to receive light, anoptical black region, a first groove portion provided between adjacentphotoelectric conversion elements in the effective pixel region, asecond groove portion provided in the optical black region; a thirdgroove portion provided between the first groove portion and the secondgroove portion; and a metallic oxide disposed, at least in part, in thefirst groove portion and the third groove portion, wherein the metallicoxide extends from the first groove portion to the third groove portionalong a light-incident side of the semiconductor substrate, a lightshielding film disposed, at least in part, in the second groove portion.32. The imaging device of claim 31, further comprising an insulatingmaterial disposed, at least in part, in the first groove portion. 33.The imaging device of claim 32, wherein the insulating materialcomprises silicon oxide.
 34. The imaging device of claim 32, wherein theinsulating material is disposed adjacent to the metallic oxide in thefirst groove portion.
 35. The imaging device of claim 32, wherein thefirst groove portion is included in a lattice-shaped grooving portionthat surrounds at least one of the first plurality of photoelectricconversion elements in the effective pixel region in a plan view. 36.The imaging device of claim 35, wherein the lattice-shaped groovingportion surrounds each of the first plurality of photoelectricconversion elements in the effective pixel region in a plan view. 37.The imaging device of claim 32, further comprising: an insulatingmaterial disposed, at least in part, in the second groove portion; and ametallic oxide disposed, at least in part, in the second groove portion.38. The imaging device of claim 37, wherein the insulating materialdisposed, at least in part, in the second groove portion is a sameinsulating material as the insulating material disposed, at least inpart, in the first groove portion.
 39. The imaging device of claim 37,wherein the metallic oxide disposed, at least in part, in the secondgroove portion is a same metallic oxide as the metallic oxide disposed,at least in part, in the first groove portion.
 40. The imaging device ofclaim 32, wherein a part of the insulating material is disposed outsidethe first groove portion.
 41. The imaging device of claim 31, whereinthe metallic oxide comprises hafnium oxide.
 42. The imaging device ofclaim 31, wherein the metallic oxide is selected from the groupconsisting of hafnium oxide, tantalum pentoxide, and zirconium dioxide.43. The imaging device of claim 31, wherein a depth dimension of thefirst groove portion is larger than a width dimension of the firstgroove portion.
 44. The imaging device of claim 31, further comprising alight-shielding component disposed adjacent to at least part of thesemiconductor substrate in the optical black region.
 45. The imagingdevice of claim 44, wherein the light-shielding component comprisestungsten.
 46. The imaging device of claim 31, wherein the imaging deviceis a rear-surface irradiation type.
 47. The imaging device of claim 31,further comprising an interconnection layer, wherein the semiconductorsubstrate is disposed between the interconnection layer and a pluralityof color filters configured to receive light.
 48. The imaging device ofclaim 47, wherein the plurality of color filters are arranged in an RGBcolor filter layer.
 49. The imaging device of claim 47, furthercomprising a plurality of microlenses formed adjacent to the pluralityof color filters.
 50. The imaging device of claim 49, wherein theplurality of microlenses comprise an organic material.